 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Semiconductor April 1999 PRO CE NS N ESIG RAW ITHD O NEW D TW PAR ETE - N L BSO SS O MCTV75P60E1, MCTA75P60E1 JEDEC STYLE TO-247 5-LEAD ANODE ANODE CATHODE GATE RETURN GATE 75A, 600V P-Type MOS Controlled Thyristor (MCT) Package Features * 75A, -600V * VTM = -1.3V(Maximum) at I = 75A and +150oC * 2000A Surge Current Capability * 2000A/s di/dt Capability * MOS Insulated Gate Control * 120A Gate Turn-Off Capability at +150oC Description The MCT is an MOS Controlled Thyristor designed for switching currents on and off by negative and positive pulsed control of an insulated MOS gate. It is designed for use in motor controls, inverters, line switches and other power switching applications. The MCT is especially suited for resonant (zero voltage or zero current switching) applications. The SCR like forward drop greatly reduces conduction power loss. MCTs allow the control of high power circuits with very small amounts of input energy. They feature the high peak current capability common to SCR type thyristors, and operate at junction temperatures up to +150oC with active switching. PART NUMBER INFORMATION PART NUMBER MCTV75P60E1 MCTA75P60E1 PACKAGE TO-247 MO-093AA BRAND MV75P60E1 MA75P60E1 JEDEC MO-093AA (5-LEAD TO-218) ANODE ANODE CATHODE GATE RETURN GATE Symbol G A K NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified MCTV75P60E1 MCTA75P60E1 UNITS V V A A A A V V A/s W W/oC oC oC Peak Off-State Voltage (See Figure 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDRM Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous Cathode Current (See Figure 2) TC = +25oC (Package Limited) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Non-Repetitive Peak Cathode Current (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak Controllable Current (See Figure 10) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Continuous) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate-Anode Voltage (Peak) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Rate of Change of Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (0.063" (1.6mm) from case for 10s) NOTE: VRRM IK25 IK90 IKSM IKC VGA VGAM dv/dt di/dt PT TJ, TSTG TL -600 +5 85 75 2000 120 20 25 See Figure 11 2000 208 1.67 -55 to +150 260 1. Maximum Pulse Width of 250s (Half Sine) Assume TJ (Initial) = +90oC and TJ (Final) = TJ (Max) = +150oC CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1999 File Number 3374.6 2-18 Specifications MCTV75P60E1, MCTA75P60E1 Electrical Specifications PARAMETER Peak Off-State Blocking Current TC = +25oC Unless Otherwise Specified SYMBOL IDRM TEST CONDITIONS VKA = -600V, VGA = +18V Peak Reverse Blocking Current IRRM VKA = +5V VGA = +18V On-State Voltage VTM IK = IK90, VGA = -10V Gate-Anode Leakage Current Input Capacitance IGAS VGA = 20V VKA = -20V, TJ = +25oC VGA = +18V L = 200H, IK = IK90 RG = 1, VGA = +18V, -7V TJ = +125oC VKA = -300V TC = +150oC TC = +25oC TC = +150oC TC = +25oC TC = +150oC TC = +25oC MIN TYP MAX 3 100 4 100 1.3 1.4 200 UNITS mA A mA A V V nA CISS - 10 - nF Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy Thermal Resistance tD(ON)I - 300 - ns tRI tD(OFF)I - 200 700 - ns ns tFI EOFF RJC - 1.15 10 .5 1.4 .6 s mJ oC/W Typical Performance Curves 300 120 110 IK , DC CATHODE CURRENT (A) 100 90 80 70 60 50 40 30 20 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 35 45 55 65 75 85 95 105 115 125 135 145 155 PACKAGE LIMIT IK, CATHODE CURRENT (A) 100 PULSE TEST PULSE DURATION - 250s DUTY CYCLE < 2% TJ = +150oC 10 TJ = TJ = +25oC -40oC VTM, CATHODE VOLTAGE (V) TC, CASE TEMPERATURE (oC) FIGURE 1. CATHODE CURRENT vs SATURATION VOLTAGE (TYPICAL) FIGURE 2. MAXIMUM CONTINUOUS CATHODE CURRENT 2-19 MCTV75P60E1, MCTA75P60E1 Typical Performance Curves (Continued) 500 TD(ON)I , TURN-ON DELAY (ns) TJ = +150oC, RG = 1, L = 200H TD(OFF)I , TURN-OFF DELAY (s) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 10 20 30 40 50 60 70 80 90 100 110 120 VKA = -200V VKA = -300V TJ = +150oC, RG = 1, L = 200H 400 300 VKA = -300V 200 VKA = -200V 100 0 10 20 30 40 50 60 70 80 90 100 110 120 IK, CATHODE CURRENT (A) IK, CATHODE CURRENT (A) FIGURE 3. TURN-ON DELAY vs CATHODE CURRENT (TYPICAL) FIGURE 4. TURN-OFF DELAY vs CATHODE CURRENT (TYPICAL) 500 TJ = +150oC, RG = 1, L = 200H 2.0 1.8 TJ = +150oC, RG = 1, L = 200H 400 tFI , FALL TIME (s) tRI, RISE TIME (ns) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 VKA = -200V VKA = -300V 300 VKA = -200V 200 VKA = -300V 100 0 10 20 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 120 0.0 10 20 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 120 FIGURE 5. TURN-ON RISE TIME vs CATHODE CURRENT (TYPICAL) TJ = +150oC, RG = 1, L = 200H VKA = -300V VKA = -200V FIGURE 6. TURN-OFF FALL TIME vs CATHODE CURRENT (TYPICAL) 20.0 VKA = -300V TJ = +150oC, RG = 1, L = 200H EOFF, TURN-OFF SWITCHING LOSS (mJ) EON, TURN-ON SWITCHING LOSS (mJ) 5.0 10.0 VKA = -200V 1.0 0.1 10 20 30 40 50 60 70 80 90 IK, CATHODE CURRENT (A) 100 110 120 1.0 10 20 30 40 50 60 70 80 90 IK , CATHODE CURRENT (A) 100 110 120 FIGURE 7. TURN-ON ENERGY LOSS vs CATHODE CURRENT (TYPICAL) FIGURE 8. TURN-OFF ENERGY LOSS vs CATHODE CURRENT (TYPICAL) 2-20 MCTV75P60E1, MCTA75P60E1 Typical Performance Curves (Continued) fMAX , MAX OPERATING FREQUENCY (kHz) 100 EON 0, tD(ON) I 0 VKA = -200V VKA = -300V fMAX1 = 0.05(tD(ON) I + tD(OFF) I) fMAX2 = (PD - PC) / ESWITCH PD: ALLOWABLE DISSIPATION PC: CONDUCTION DISSIPATION (PC DUTY FACTOR = 50%) RJC = 0.5oC/W 100 IK , CATHODE CURRENT (A) 200 IK , PEAK CATHODE CURRENT (A) EON = tD(ON) I = 0 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 -50 TJ = +150oC, VGA = 18V, L = 200H 10 TURN-OFF SAFE OPERATING AREA 1 10 -150 -250 -350 -450 VKA , PEAK TURN OFF VOLTAGE (V) -550 FIGURE 9. OPERATING FREQUENCY vs CATHODE CURRENT (TYPICAL) TJ = +150oC, VGA = 18V -725 VDRM, BREAKDOWN VOLTAGE (V) -700 -675 -650 -625 -600 -575 -550 -525 -500 -475 -450 -425 0.1 1.0 10.0 100.0 dv/dt (V/s) 1000.0 10000.0 FIGURE 10. TURN-OFF CAPABILITY vs ANODE-CATHODE VOLTAGE -200 CS = 0.1F, TJ = +150oC CS = 1F, TJ = +150oC SPIKE VOLTAGE (V) -100 CS = 0.1F, TJ = +25oC -10 CS = 2F, TJ = +150oC CS = 1F, TJ = +25oC CS = 2F, TJ = +25oC -1 1 6 11 16 21 26 31 di/dt (A/s) 36 41 46 FIGURE 11. BLOCKING VOLTAGE vs dv/dt FIGURE 12. SPIKE VOLTAGE vs di/dt (TYPICAL) Operating Frequency Information Operating frequency information for a typical device (Figure 9) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs cathode current (IAK) plots are possible using the information shown for a typical unit in Figures 3 to 8. The operating frequency plot (Figure 9) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(ON)I + tD(OFF)I). tD(ON)I + tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(ON)I is defined as the 10% point of the leading edge of the input pulse and the point where the cathode current rises to 10% of its maximum value. tD(OFF)I is defined as the 90% point of the trailing edge of the input pulse and the point where the cathode current falls to 90% of its maximum value. Device delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EON + EOFF). The allowable dissipation (PD) is defined by PD = (TJMAX - TC) / RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VAK * IAK) / (duty factor/100). EON is defined as the sum of the instantaneous power loss starting at the leading edge of the input pulse and ending at the point where the anodecathode voltage equals saturation voltage (VAK = VTM). EOFF is defined as the sum of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the cathode current equals zero (IK = 0). The switching power loss (Figure 10) is defined as fMAX2 * (EON + EOFF). Because Turn-on switching losses can be greatly influenced by external circuit conditions and components, fMAX curves are plotted both including and neglecting turn-on losses. 2-21 MCTV75P60E1, MCTA75P60E1 Test Circuits VG 200H RURG8060 + - IK VK + DUT 20V 10k CS DUT + - 500 VA 9V - 4.7k + IK FIGURE 13. SWITCHING TEST CIRCUIT FIGURE 14. VSPIKE TEST CIRCUIT MAXIMUM RISE AND FALL TIME OF VG IS 200ns VG 10% 90% VG di/dt -VKA 90% IK VSPIKE VTM IK 10% tD(OFF) I tF I tR I tD(ON) I VAK FIGURE 15. SWITCHING TEST WAVEFORMS FIGURE 16. VSPIKE TEST WAVEFORMS Handling Precautions for MCT's MOS Controlled Thyristors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. MCT's can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as *"ECCOSORB LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGA. Exceeding the rated VGA can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. Trademark Emerson and Cumming, Inc. 2-22 |
Price & Availability of MCTV75P60E1
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |